advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 600v fast switching characteristics r ds(on) 12 simple drive requirement i d 160ma description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t a =25 continuous drain current, v gs @ 10v ma i d @t a =100 continuous drain current, v gs @ 10v ma i dm pulsed drain current 1 ma p d @t a =25 total power dissipation w t stg t j operating junction temperature range thermal data symbol value unit rthj-a maximum thermal resistance, junction-ambient 150 /w data & specifications subject to change without notice 1 200810225 storage temperature range -55 to 150 parameter 300 0.83 -55 to 150 100 parameter rating 600 30 160 rohs-compliant product AP01L60T g d s to-92 g d s a dvanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the to-92 package is widely used for all commercial-industrial applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 600 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.8 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =0.5a - - 12 ? ?
ap01l60 t fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.0 0.6 1.2 1.8 2.4 3.0 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =0.5a v g =10v 0.0 0.5 1.0 1.5 0 122436 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 6.0v 5.5v 5.0v v g =4.0v 0.00 0.25 0.50 0.75 1.00 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 5.0v 4.5v v g =4.0v 0.01 0.1 1 10 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 1.6 2 2.4 2.8 3.2 3.6 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v)
ap01l60 t fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum drain current v.s. fig 10. typical power dissipation case temperature fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 1 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 3 6 9 12 15 0123456789 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 100m a v ds = 480 v 0.00 0.05 0.10 0.15 0.20 25 50 75 100 125 150 t a , case temperature ( o c ) i d , drain current (a) 0 0.4 0.8 1.2 25 50 75 100 125 150 t a , case temperature( o c) p d (w)
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